| PART |
Description |
Maker |
| AM29LL800BB-150EC AM29LL800BB-150FIB AM29LL800BB-1 |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory 1M X 8 FLASH 2.2V PROM, 200 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory 1M X 8 FLASH 2.2V PROM, 200 ns, PDSO48
Quadruple Bus Buffer Gates With 3-State Outputs 14-SSOP -40 to 85 1M X 8 FLASH 2.2V PROM, 150 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory 8兆位1 M中的x 8-Bit/512亩x 16位）.2伏的CMOS只引导扇区闪
|
Advanced Micro Devices, Inc.
|
| EN71PL032A0-70CWP EN71PL032A01 |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM 32 Megabit (2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 16 Megabit (1M x 16-bit) Pseudo Static RAM
|
Eon Silicon Solution Inc.
|
| EN71GL064B0 EN71GL064B0-70CWP |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM 64 Megabit (4M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 32 Megabit (2M x 16-bit) Pseudo Static RAM
|
Eon Silicon Solution Inc.
|
| S29GL032A100BFIR10 S29GL032A100TFIR10 S29GL032A100 |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 64兆，32兆和16兆位3.0伏只页面模式闪存，含00纳米MirrorBit工艺技
|
Spansion Inc.
Spansion, Inc.
|
| AM29LV160MT70RWAI AM29LV160MB35EI AM29LV160MT35EI |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory 16兆位米8 1个M x 16位）的MirrorBit3.0伏，只引导扇区闪
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 90 ns, PBGA64
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM41DL1634DB30IT AM41DL1634DB45IS AM41DL1634DB70IS |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
| AM41DL32X4GB70IS AM41DL32X4GB70IT AM41DL32X4GB85IS |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
SPANSION
|
| M41000002M M41000002R M41000002W AM41DL3228GB30IS |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
| AM29SL800CT150WBC AM29SL800CB120EI AM29SL800CB120E |
CAP 150UF 6.3V 20% TANT SMD-7343-30 TR-7
Quad 2-Input NOR Gates 14-SOIC -55 to 125 8兆位 M中的x 8-Bit/512亩x 16位）.8伏的CMOS只超低电压快闪记忆体
IC LOGIC 1G79 SINGLE POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP -40 85C SOT-23-5 3000/REEL 1M X 8 FLASH 1.8V PROM, 100 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位）.8伏的CMOS只超低电压快闪记忆体
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 120 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 100 ns, PDSO48
16-Bit Buffer/Line Driver, OE Active Low
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
